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    公开号:FR3017558A1
    申请号:FR1551173
    申请日:2015-02-13
    公开日:2015-08-21
    发明作者:David Kolesar；Aaron Sarafinas；Alan Saikin；Robert L Post
    申请人:Rohm and Haas Electronic Materials CMP Holdings Inc；Rohm and Haas Electronic Materials LLC；
    IPC主号:
    专利说明:

    [0001] TECHNICAL FIELD The present invention relates generally to the field of manufacturing polishing coats. The present invention particularly relates to a method of manufacturing polishing layers for use in chemical mechanical polishing felts. In the manufacture of integrated circuits and other electronic devices, multiple layers of conductive, semiconductive and dielectric materials are deposited on or removed from a surface of a semiconductor wafer. Thin layers of conductive, semiconductor, and dielectric materials can be deposited by many deposition techniques. Conventional deposition techniques in a modern process include physical vapor deposition (PVD), also known as sputtering, chemical vapor deposition (CVD), plasma enhanced chemical vapor deposition (PECVD), and electrochemical plating (ECP). When layers of materials are successively deposited and removed, the highest surface of the wafer becomes non-planar. Since subsequent processing of the semiconductor (eg metallization) requires the wafer to have a flat surface, the wafer must be planarized. Planarization is useful for removing unwanted surface topography and surface defects, such as rough surfaces, agglomerated materials, deterioration of the crystal lattice, scratches, and polluted layers or materials. Mechano-chemical planarization, or chemical mechanical polishing (CMP), is a conventional technique used to planarize substrates, such as semiconductor wafers. In a conventional CMP, a wafer is attached to a support assembly and contacted with a polishing felt in a CMP apparatus. The support assembly provides adjustable pressure to the wafer compressing it against the polishing felt. The felt is moved (e.g., rotated) relative to the wafer by an external control force. Simultaneously with this, a chemical composition ("suspension") or other polishing solution is provided between the wafer and the polishing felt. 301 7 5 5 8 2 The surface of the slab is thus polished and made flat by the chemical and mechanical action of the surface of the felt and the suspension. Reinhardt et al., U.S. Patent 5,578,362 discloses examples of polishing layers known in the art. The Reinhardt polishing layers comprise a polymeric matrix having hollow microspheres with a thermoplastic shell dispersed therethrough. The hollow microspheres are generally combined and mixed with a liquid polymer material and transferred to a curing mold. Strict process adjustments are typically required to facilitate the production of consistent polishing layers from batch to batch, day to day, and season to season. Despite the implementation of strict process controls, conventional processing techniques nevertheless result in undesired variation (e.g., pore size and pore distribution) in polishing layers produced batch-to-batch, day-to-day, and season to season. There is therefore a continuing need for improved polishing layer manufacturing techniques to improve the consistency of the product, particularly pores. The present invention provides a method of forming a polishing layer for polishing a substrate selected from at least one of a magnetic substrate, an optical substrate and a semiconductor substrate, comprising: providing a prepolymer material liquid; providing a plurality of hollow microspheres; exposing the plurality of hollow microspheres to a vacuum to form a plurality of exposed hollow microspheres; treating the plurality of exposed hollow microspheres with a carbon dioxide atmosphere over a treatment time of 20 minutes to <5 hours to form a plurality of treated hollow microspheres; combining the liquid prepolymer material with the plurality of treated hollow microspheres to form a curable mixture; allowing the curable mixture to react to form a cured material, wherein the reaction is allowed to begin within 24 hours after the formation of the plurality of treated hollow microspheres; and, deriving at least one polishing layer from the cured material; wherein the at least one polishing layer has a polishing surface adapted to polish the substrate. The present invention provides a method of forming a polishing layer for polishing a substrate selected from at least one of a magnetic substrate, an optical substrate and a semiconductor substrate, comprising: providing a liquid prepolymer material, wherein the liquid prepolymer material reacts to form a material selected from the group consisting of polyurethane, polysulfone, polyether sulfone, nylon, polyether, polyester, polystyrene, acrylic polymer, polyurea, polyamide, poly ( vinyl chloride), polyvinyl fluoride, polyethylene, polypropylene, polybutadiene, polyethylene imine, polyacrylonitrile, polyethylene oxide, polyolefin, polyalkyl acrylate, polyalkyl methacrylate ), polyamide, polyether imide, polyketone, epoxy, silicone, polymer formed from ethylene propylene diene monomer, protein, polysaccharide, polyacetate and a combination of at least two of the preceding nts; providing a plurality of hollow microspheres; exposing the plurality of hollow microspheres to a vacuum to form a plurality of exposed hollow microspheres; treating the plurality of exposed hollow microspheres with a carbon dioxide atmosphere over a treatment time of 20 minutes to <5 hours to form a plurality of treated hollow microspheres; combining the liquid prepolymer material with the plurality of treated hollow microspheres to form a curable mixture; allowing the curable mixture to react to form a cured material, wherein the reaction is allowed to begin. 24 hours after the formation of the plurality of treated hollow microspheres; and, deriving at least one polishing layer from the cured material; wherein the at least one polishing layer has a polishing surface adapted to polish the substrate. The present invention provides a method of forming a polishing layer for polishing a substrate selected from at least one of a magnetic substrate, an optical substrate and a semiconductor substrate, comprising: providing a prepolymer material liquid, wherein the liquid prepolymer material reacts to form a material comprising a polyurethane; providing a plurality of hollow microspheres; exposing the plurality of hollow microspheres to a vacuum to form a plurality of exposed hollow microspheres; treating the plurality of exposed hollow microspheres with a carbon dioxide atmosphere over a treatment time of 20 minutes to <5 hours to form a plurality of treated hollow microspheres; combining the liquid prepolymer material with the plurality of treated hollow microspheres to form a curable mixture; allowing the curable mixture to react to form a cured material, wherein the reaction is allowed to begin. 24 hours after the formation of the plurality of treated hollow microspheres; and, deriving at least one polishing layer from the cured material; wherein the at least one polishing layer has a polishing surface adapted to polish the substrate. The present invention provides a method of forming a polishing layer for polishing a substrate selected from at least one of a magnetic substrate, an optical substrate and a semiconductor substrate, comprising: providing a liquid prepolymer material; providing a plurality of hollow microspheres, wherein each microsphere digs in the plurality of hollow microspheres has a polymeric envelope of acrylonitrile; exposing the plurality of hollow microspheres to a vacuum to form a plurality of exposed hollow microspheres; treating the plurality of exposed hollow microspheres with a carbon dioxide atmosphere over a treatment time of from 20 minutes to <5 hours to form a plurality of treated hollow microspheres; combining the liquid prepolymer material with the plurality of treated hollow microspheres to form a curable mixture; allowing the curable mixture to react to form a cured material, wherein the reaction is allowed to begin 5 hours after the formation of the plurality of treated hollow microspheres; and, deriving at least one polishing layer from the cured material; wherein the at least one polishing layer has a polishing surface adapted to polish the substrate. The present invention provides a method of forming a polishing layer for polishing a substrate selected from at least one of a magnetic substrate, an optical substrate and a semiconductor substrate, comprising: providing a liquid prepolymer material, wherein the liquid prepolymer material reacts to form a polyurethane; providing a plurality of hollow microspheres, wherein each microsphere digs into the plurality of hollow microspheres has a polyvinylidene dichloride / polyacrylonitrile copolymer shell, wherein the poly (dichloride) co-polymer shell; vinylidene) / polyacrylonitrile encapsulates an isobutane; exposing the plurality of hollow microspheres to a vacuum. 50 mm Hg over an exposure time of 20 to 40 minutes to form the plurality of exposed hollow microspheres; treating the plurality of exposed hollow microspheres with a carbon dioxide atmosphere by fluidizing the plurality of exposed hollow microspheres using a gas over a treatment period of 25 to 1 hour, preferably 35 minutes to form the plurality of treated hollow microspheres wherein the gas is> 30% by volume of CO2; combining the liquid prepolymer material with the plurality of treated hollow microspheres to form a curable mixture; allowing the curable mixture to react to form a cured material, wherein the reaction is allowed to begin 5 hours after the formation of the plurality of treated hollow microspheres; and, deriving at least one polishing layer from the cured material; wherein the at least one polishing layer has a polishing surface adapted to polish the substrate. The present invention provides a method of forming a polishing layer for polishing a substrate selected from at least one of a magnetic substrate, an optical substrate and a semiconductor substrate, comprising: providing a mold; provide a liquid prepolymer material; providing a plurality of hollow microspheres; exposing the plurality of hollow microspheres to a vacuum to form a plurality of exposed hollow microspheres; treating the plurality of exposed hollow microspheres with a carbon dioxide atmosphere over a treatment time of 20 minutes to <5 hours to form a plurality of treated hollow microspheres; combining the liquid prepolymer material with the plurality of treated hollow microspheres to form a curable mixture; transferring the curable mixture into the mold; allowing the curable mixture to react to form a cured material in the mold, wherein the reaction is allowed to begin 24 hours after the formation of the plurality of treated hollow microspheres; and, deriving at least one polishing layer from the cured material; wherein the at least one polishing layer has a polishing surface adapted to polish the substrate. The present invention provides a method of forming a polishing layer for polishing a substrate selected from at least one of a magnetic substrate, an optical substrate and a semiconductor substrate, comprising: provide a mold; provide a liquid prepolymer material; providing a plurality of hollow microspheres; exposing the plurality of hollow microspheres to a vacuum to form a plurality of exposed hollow microspheres; treating the plurality of exposed hollow microspheres with a carbon dioxide atmosphere over a treatment time of 20 minutes to <5 hours to form a plurality of treated hollow microspheres; combining the liquid prepolymer material with the plurality of hollow microspheres treated to form a curable mixture; transferring the curable mixture into the mold; allowing the curable mixture to react to form a cured material in the mold, wherein the reaction is allowed to begin 24 hours after the formation of the plurality of treated hollow microspheres; and, deriving at least one polishing layer from the cured material by slitting the cured material to form the at least one polishing layer; wherein the at least one polishing layer has a polishing surface adapted to polish the substrate. According to a particular embodiment, the at least one polishing layer is a plurality of polishing layers. According to another particular embodiment, the liquid prepolymer material reacts to form a polyurethane; each microsphere hollow in the plurality of hollow microspheres has a copolymer shell of polyvinylidene dichloride / polyacrylonitrile; the polyvinylidene dichloride / polyacrylonitrile copolymer shell encapsulates an isobutane; and, the plurality of hollow microspheres is exposed to a vacuum at 50 mm Hg over an exposure time of 20 to 40 minutes to form the plurality of exposed hollow microspheres; and, the plurality of exposed hollow microspheres are treated with the carbon dioxide atmosphere by fluidizing the plurality of exposed hollow microspheres using a gas over a treatment time of 25 minutes to 1 hour to form the plurality of hollow microspheres treated, where the gas is> 30% by volume of CO2. According to another particular embodiment, the reaction is allowed to begin 1 hour after the formation of the plurality of treated hollow microspheres. The present invention provides a method of forming a polishing layer for polishing a substrate selected from at least one of a magnetic substrate, an optical substrate and a semiconductor substrate, comprising: providing a mold ; providing a liquid prepolymer material, wherein the liquid prepolymer material reacts to form a polyurethane; providing a plurality of hollow microspheres, wherein each microsphere digs in the plurality of hollow microspheres has a poly (vinylidene dichloride) / polyacrylonitrile copolymer shell and wherein the poly (vinylidene dichloride) / polyacrylonitrile copolymer shell encapsulates an isobutane ; exposing the plurality of hollow microspheres to a vacuum of 50 mm Hg over an exposure time of 20 to 40 minutes to form the plurality of exposed hollow microspheres; treating the plurality of exposed hollow microspheres with a carbon dioxide atmosphere by fluidizing the plurality of exposed hollow microspheres using a gas over a treatment time of 25 minutes to 1 hour to form the plurality of treated hollow microspheres, wherein the gas is> 30% by volume of CO2; combining the liquid prepolymer material with the plurality of treated hollow microspheres to form a curable mixture; transferring the curable mixture into the mold; allowing the curable mixture to react to form a cured material in the mold, wherein the reaction is allowed to begin 24 hours after the formation of the plurality of treated hollow microspheres; and, deriving at least one polishing layer from the cured material by slitting the cured material to form the at least one polishing layer; wherein the at least one polishing layer has a polishing surface adapted to polish the substrate. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a graph of the C90 plot as a function of the temperature rise of a plurality of nitrogen-treated hollow microspheres over an exposure time of eight hours. Fig. 2 is a graph of the C90 curve as a function of the temperature rise of a plurality of hollow microspheres treated with CO 2 over an exposure time of three hours.
    [0002] Fig. 3 is a graph of the C90 plot as a function of the temperature decrease of a plurality of nitrogen-treated hollow microspheres over an exposure time of eight hours. Figure 4 is a graph of the C90 curve as a function of the temperature decrease of a plurality of hollow microspheres treated with CO2 over a three hour exposure time. Figure 5 is a graph of the C90 plot as a function of the temperature rise of a plurality of hollow microspheres treated with CO2 over a five hour exposure time.
    [0003] DETAILED DESCRIPTION It has surprisingly been found that the sensitivity of pore size in polishing layers to process conditions can be significantly reduced by exposing a plurality of hollow microspheres to vacuum followed by treatment with an atmosphere. of carbon dioxide before the microspheres are combined with a liquid prepolymer material to form a curable mixture from which polishing layers are subsequently formed.
    [0004] It has been specifically found that by conditioning a plurality of hollow microspheres as described, wider variations in process temperature can be tolerated in a batch (eg within a mold), batch to batch, day to day, and season to season, while continuing to produce polishing layers having a consistent pore size, pore count, and specific gravity. The consistency of the pore size and the pore count is particularly critical in polishing layers incorporating the plurality of hollow microspheres, wherein the hollow microspheres in the plurality of hollow microspheres each have a thermally expandable polymeric shell. That is, the specific density of the polishing layer produced using the same load (i.e., mass% or count) of hollow microspheres included in the curable material will vary depending on the actual size. (ie the diameter) of the hollow microspheres during curing of the hardenable material.
    [0005] The term "polyurethane" as used herein and in the appended claims includes (a) polyurethanes formed by the reaction of (i) isocyanates and (ii) polyols (including diols); and (b) poly (urethane) formed by the reaction of (i) isocyanates with (ii) polyols (including diols) and (iii) water, amines or a combination of water and amines. The term "gel point" as used herein and in the appended claims with reference to a curable mixture indicates the moment in the curing process where the curable mixture exhibits an infinite stabilized shear viscosity and an equilibrium modulus. zero. The term "curing temperature in the mold" as used herein and in the appended claims refers to the temperature exhibited by the curable mixture during the reaction to form the cured material. The term "maximum cure temperature in the mold" as used herein in the appended claims refers to the maximum temperature exhibited by the curable mixture during the reaction to form the cured material. The term "gel time" as used herein and in the appended claims referring to a curable mixture indicates the total curing time for that mixture as determined using a standard test method according to ASTM D3795-00a (re-approved in 2006) Standard Test Method for Thermal Flow, Cure, and Behavior Properties of Pourable Thermosetting Materials by Torque Rheometer. The liquid prepolymer material preferably reacts (i.e. cures) to form a material selected from polyurethane, polysulfone, polyether sulfone, nylon, polyether, polyester, polystyrene, acrylic polymer, polyurea, polyamide, polyvinyl chloride, polyvinyl fluoride, polyethylene, polypropylene, polybutadiene, polyethylene imine, polyacrylonitrile, polyethylene oxide , a polyolefin, a polyalkyl acrylate, a polyalkyl methacrylate, a polyamide, a polyether imide, a polyketone, an epoxy, a silicone, a polymer formed from ethylene propylene diene monomer , a protein, a polysaccharide, a polyacetate and a combination of at least two of the foregoing. The liquid prepolymer material preferably reacts to form a material comprising a polyurethane. The liquid prepolymer material reacts even better to form a material comprising a polyurethane. The liquid prepolymer material reacts (cures) much better to form a polyurethane. The liquid prepolymer material preferably comprises a polyisocyanate-containing material. The liquid prepolymer material further includes the reaction product of a polyisocyanate (eg, diisocyanate) and a hydroxyl group-containing material. The polyisocyanate is preferably selected from methylene bis-4,4'-cyclohexylisocyanate; cyclohexyl diisocyanate; isophorone diisocyanate; hexamethylene diisocyanate; 1,2-propylene diisocyanate; tetramethylene 1,4-diisocyanate; 1,6-hexamethylene diisocyanate; 1,12-diisocyanate of dodecane; cyclobutane 1,3-diisocyanate; 1,3-cyclohexane diisocyanate; cyclohexane 1,4-diisocyanate; 1-isocyanato-3,3,5-trimethyl-5-isocyanatomethylcyclohexane; methylcyclohexylene diisocyanate; hexamethylene diisocyanate triisocyanate; 2,4,4-trimethyl-1,6,6-hexane diisocyanate triisocyanate; urethione of hexamethylene diisocyanate; ethylene diisocyanate; 2,2,4-trimethylhexamethylene diisocyanate; 2,4,4-tri-methylhexamethylene diisocyanate; dicyclohexylmethane diisocyanate; and combinations thereof. The polyisocyanate is even better aliphatic and has less than 14 percent unreacted isocyanate groups. The hydroxyl group-containing material used in the present invention is preferably a polyol. Exemplary polyols include, for example, polyether polyols, hydroxy terminated polybutadiene (including partially and fully hydrogenated derivatives), polyester polyols, polycaprolactone polyols, polycarbonate polyols, and mixtures thereof.
    [0006] Preferred polyols include polyether polyols. Examples of polyether polyols include polytetramethylene ether glycol ("PTMEG"), polyethylene propylene glycol, polyoxypropylene glycol, and mixtures thereof. The hydrocarbon chain may have saturated or unsaturated bonds and substituted or unsubstituted aromatic and cyclic groups. The polyol of the present invention preferably comprises PTMEG. Suitable polyester polyols include poly (ethylene adipate) glycol; poly (butylene adipate) glycol; poly (ethylene propylene adipate) glycol; o-phthalate-1,6-hexanediol; poly (hexamethylene adipate) glycol; and mixtures thereof but are not limited thereto. The hydrocarbon chain may have saturated or unsaturated bonds, or substituted or unsubstituted aromatic and cyclic groups. Suitable polycaprolactone polyols include polycaprolactone initiated with 1,6-hexanediol; polycaprolactone initiated with diethylene glycol; polycaprolactone initiated with trimethylolpropane; polycaprolactone initiated with neopentyl glycol; polycaprolactone initiated with 1,4-butanediol; polycaprolactone initiated by PTMEG; and mixtures thereof but are not limited thereto. The hydrocarbon chain may have saturated or unsaturated bonds, or substituted or unsubstituted aromatic and cyclic groups. Suitable polycarbonates include poly (phthalate carbonate) and poly (hexamethylene carbonate) glycol but are not limited thereto. The plurality of hollow microspheres is preferably selected from gas filled hollow core polymeric materials and liquid filled hollow core polymeric materials, wherein the hollow microspheres in the plurality of hollow microspheres each have a thermally expandable polymeric shell. The thermally expandable polymeric shell is preferably made of a material selected from the group consisting of polyvinyl alcohol, pectin, polyvinylpyrrolidone, hydroxyethylcellulose, methylcellulose, hydroxypropylmethylcellulose, carboxymethylcellulose, hydroxypropylcellulose, and the like. poly (acrylic acids), polyacrylamides, polyethylene glycols, polyhydroxyetheracrylates, starches, maleic acid copolymers, poly (ethylene oxide), polyurethanes, cyclodextrin and combinations thereof. this. The thermally expandable polymer shell further comprises an acrylonitrile polymer (preferably wherein the acrylonitrile polymer is an acrylonitrile copolymer; even more preferably, the acrylonitrile polymer is an acrylonitrile copolymer selected from the group consisting of a polyvinylidene dichloride / polyacrylonitrile copolymer and a polyacrylonitrile / alkylacrylonitrile copolymer, more preferably wherein the acrylonitrile polymer is a poly (dichloride dichloride) copolymer; vinylidene) / polyacrylonitrile). The hollow microspheres in the plurality of hollow microspheres are preferably gas-filled hollow core polymer materials, wherein the thermally expandable polymer shell encapsulates a hydrocarbon gas. The hydrocarbon gas is preferably selected from the group consisting of at least one of methane, ethane, propane, isobutane, n-butane and isopentane, n-pentane, neo-pentane, cyclopentane, hexane, isohexane, neo-hexane, cyclohexane, heptane, isoheptane, octane and isooctane. The hydrocarbon gas is even better selected from the group consisting of at least one of methane, ethane, propane, isobutane, n-butane and isopentane. The hydrocarbon gas is more preferably selected from the group consisting of at least one of isobutane and isopentane. The hydrocarbon gas is still more preferably isobutane. The hollow microspheres in the plurality of hollow microspheres are still more preferably gas-filled hollow core polymer materials having an acrylonitrile and vinylidene chloride copolymer shell encapsulating an isobutane (eg Expancel® microspheres available from Akzo Nobel).
    [0007] The curable mixture comprises a liquid prepolymer material and a plurality of treated hollow microspheres. The curable mixture preferably comprises a liquid prepolymer material and a plurality of treated hollow microspheres, wherein the plurality of treated hollow microspheres are uniformly dispersed in the liquid prepolymer material. The curable mixture preferably has a maximum mold cure temperature of 72 to 90 ° C (more preferably 75 to 85 ° C). The curable mixture optionally further comprises a curing agent. Preferred curing agents include diamines. Suitable polydiamines include primary amines and secondary amines. Preferred polydiamines include diethyltoluenediamine ("DETDA"); 3,5-dimethylthio-2,4-toluenediamine and isomers thereof; 3,5-diethyltoluene-2,4-diamine and isomers thereof (e.g., 3,5-diethyltoluene-2,6-diamine); 4,4'-bis- (sec-butylamino) -diphenylmethane; 1,4-bis (sec-butylamino) benzene; 4,4'-methylene-bis- (2-chloroaniline); 4,4'-methylenebis (3-chloro-2,6-diethylaniline) ("MCDEA"); poly (tetramethylene oxide) di-paminobenzoate; N, N'-dialkyldiaminodiphenylmethane; p, p'-methylenedianiline ("MDA"); m-phenylenediamine ("MPDA"); methylene-bis-2-chloroaniline ("MBOCA"); 4,4'-methylene-bis- (2-chloroaniline) ("MOCA"); 4,4'-methylene-bis- (2,6-diethylaniline) ("MDEA"); 4,4'-methylene-bis- (2,3-dichloroaniline) ("MDCA"); 4,4'-diamino-3,3'-diethyl-5,5'-dimethyl-diphenylmethane, 2,2 ', 3,3'-tetrachlorodiaminodiphenylmethane; trimethylene glycol di-p-aminobenzoate; and mixtures thereof, but are not limited thereto. The diamine curing agent is preferably selected from 3,5-dimethylthio-2,4-toluenediamine and isomers thereof. The curing agents may also include hydroxyl-terminated diols, triols, tetraols, and hardeners. Diols, triols and tetraols include ethylene glycol; diethylene glycol; polyethylene glycol; propylene glycol; polypropylene glycol; polytetramethylene ether glycol of low molecular weight; 1,3-bis (2-hydroxyethoxy) benzene; 1,3-bis [2- (2-hydroxyethoxy) ethoxy] benzene; 1,3-bis- {2- [2- (2-hydroxyethoxy) ethoxy] ethoxy} benzene; 1,4-butanediol; 1,5-pentanediol; 1,6-hexanediol; resorcinol-di- (beta-hydroxyethyl) ether; hydroquinone-di (beta-hydroxyethyl) ether; and mixtures thereof. Preferred hydroxy terminated hardeners include 1,3-bis (2-hydroxyethoxy) benzene; 1,3-bis [2- (2-hydroxyethoxy) ethoxy] benzene; 1,3-bis- {2- [2- (2-hydroxyethoxy) ethoxy] ethoxy} benzene; 1,4-butanediol; and mixtures thereof. The hydroxy and diamine terminated hardeners may comprise one or more saturated, unsaturated cyclic and aromatic groups. The plurality of hollow microspheres are exposed to a vacuum to form a plurality of exposed hollow microspheres. The plurality of hollow microspheres is preferably exposed to a vacuum of 25 mm Hg (more preferably at a vacuum of 50 mm Hg, more preferably at a vacuum of 70 mm Hg) to form the plurality of microspheres. hollow microspheres exposed. The plurality of hollow microspheres is preferably exposed to a vacuum over an exposure time of 10 minutes to 5 hours (even better from 20 minutes to 40 minutes, even more preferably 25 minutes to 35 minutes) 301 7 5 5 8 14 to form the plurality of exposed hollow microspheres. The plurality of hollow microspheres are preferably exposed to a vacuum of 25 mm Hg (more preferably at a vacuum of 50 mm Hg, more preferably at a vacuum of 70 mm Hg) over a period of exposure. from 10 minutes to <5 hours (even better from 20 minutes to 40 minutes, even better from 25 minutes to 35 minutes) to form the plurality of exposed hollow microspheres. The plurality of exposed hollow microspheres are treated with a carbon dioxide atmosphere over a treatment period of 10 minutes to <5 hours to form a plurality of treated hollow microspheres. The plurality of exposed hollow microspheres is preferably treated with a carbon dioxide atmosphere over a treatment time of 20 minutes to 3 hours to form a plurality of treated hollow microspheres. The plurality of exposed hollow microspheres is further best treated with a carbon dioxide atmosphere over a treatment time of 25 minutes to 1 hour to form a plurality of treated hollow microspheres. The plurality of exposed hollow microspheres is further best treated with a carbon dioxide atmosphere over a treatment period of 25 to 35 minutes to form a plurality of treated hollow microspheres. The carbon dioxide atmosphere with which the plurality of hollow microspheres exposed is treated to form the plurality of treated hollow microspheres preferably comprises> 30% by volume of CO2 (even more preferably 33% by volume of CO2; more preferably 25 to 90% by volume of CO2, particularly preferably 98% by volume of CO2). The carbon dioxide atmosphere is preferably an inert atmosphere. The carbon dioxide atmosphere preferably contains <1% by volume of O 2 and <1% by volume of H 2 O. The carbon dioxide atmosphere further contains <0.1% by volume of O 2 and <0.1% by volume of H 2 O. The plurality of exposed hollow microspheres is preferably treated with the carbon dioxide atmosphere by fluidizing the plurality of exposed hollow microspheres using a gas to form the plurality of treated hollow microspheres. The plurality of exposed hollow microspheres are further best treated with the carbon dioxide atmosphere by fluidizing the plurality of exposed hollow microspheres using a gas over the course of 20 minutes of treatment. at <5 hours (preferably 20 minutes to 3 hours, more preferably 25 minutes to 1 hour, even more preferably 25 to 35 minutes) to form a plurality of treated hollow microspheres; Wherein the gas comprises 30% by volume of CO2 (preferably 33% by volume of CO2, more preferably 90% by volume of CO2, still more preferably 98% by volume of CO2) and wherein the gas contains <1% by volume of 02 and <1% by volume of H2O. The plurality of exposed hollow microspheres are further best treated with the carbon dioxide atmosphere by fluidizing the plurality of exposed hollow microspheres using a gas over an exposure time of 25 minutes to 1 hour to form the plurality of microspheres. hollow treated; wherein the gas comprises> 30% by volume of CO2 (preferably 33% by volume of CO2, more preferably 90% by volume of CO2, and even more preferably 98% by volume of CO2); and where the gas contains <0.1% by volume of CO2 and <0.1% by volume of H2O. The plurality of treated hollow microspheres is combined with the liquid prepolymer material to form the curable mixture. The curable mixture is then allowed to react to form a cured material. The formation reaction of the cured material is allowed to begin for 24 hours (preferably 12 hours, even better 8 hours, and much more preferably 5 hours) after the formation of the plurality of treated hollow microspheres. The curable material is preferably transferred into a mold, wherein the curable mixture is subjected to the reaction to form the hardened material in the mold. The mold may preferably be selected from the group consisting of an open mold and a closed mold. The curable mixture can preferably be transferred into the mold by pouring or injecting it. The mold is preferably provided with a temperature control system. At least one polishing layer is derived from the cured material. The cured material is preferably a cake, wherein a plurality of polishing layers are derived from the cake. The cake is preferably split, or similarly severed, into several polishing layers of desired thickness. Several polishing layers are even better derived from the cake, by slitting the cake into several polishing layers using a splitting blade. The cake is preferably heated to facilitate splitting. The cake is further heated using an infrared heating source during slitting of the cake to form several polishing layers. The at least one polishing layer has a polishing surface adapted to polish the substrate. The polishing surface is preferably adapted to polish the substrate by incorporating a macrotexture selected from at least one of perforations and grooves. The perforations may preferably extend from the polishing surface a portion or all through the thickness of the polishing layer. The grooves are preferably disposed on the polishing surface so that upon rotation of the polishing layer during polishing, at least one groove sweeps the surface of the substrate. The grooves are preferably selected from curved grooves, linear grooves and combinations thereof. The grooves have a depth _. 10 thousandths of an inch (preferably 10 to 150 thousandths of an inch). The grooves preferably form a groove pattern which comprises at least two grooves having a combination of a depth selected from .. 10 mil, _ _. 15 thousandths of an inch and 15 to 150 thousandths of an inch; a width selected from _. 10 thousandths of an inch and 10 to 100 thousandths of an inch; and a step chosen from 30 mils, 50 mils, 50 to 200 mils, 70 to 200 mils, and 90 to 200 mils. The method of making a polishing layer of the present invention preferably comprises: providing a mold; and, transferring the curable mixture into the mold; wherein the curable mixture is subjected to the reaction to form the hardened material in the mold. The method for producing a polishing layer of the present invention preferably further comprises: providing a mold; provide a temperature control system; transferring the curable mixture into the mold; wherein the curable mixture is subjected to the reaction to form the cured material in the mold and wherein the temperature control system maintains a curable mixture temperature while the curable mixture is subjected to the reaction. to form the cured material. Even better, wherein the temperature control system maintains a curable mixture temperature while the curable mixture is subjected to the reaction to form the cured material so that a maximum curing temperature in the mold exhibited by the curable mixture during the reaction to form the cured material is 72 to 90 ° C. An important step in substrate polishing operations is the determination of a polishing end point. A typical in situ method for the detection of the boundary point involves the direction of a light beam on the surface of the substrate and the analysis of the properties of the substrate surface (for example the thickness of the films on its top) on the base of light reflected from the surface of the substrate to determine the polishing end point. In order to facilitate such limit point processes on the light base, polishing layers made using the method of the present invention, optionally further include a limit point detection window. The limit point detection window is preferably an integral window incorporated in the polishing layer.
    [0008] The method for producing a polishing layer of the present invention preferably further comprises: providing a mold; provide a window block; fix the window block in the mold; and, transferring the curable mixture into the mold; wherein the curable mixture is subjected to the reaction to form the hardened material in the mold. The window block may be disposed in the mold before or after transfer of the curable mixture into the mold. The window block is preferably disposed in the mold prior to transfer of the curable mixture into the mold. The method of making a polishing layer of the present invention further preferably comprises: providing a mold; provide a window block; provide a window block adhesive; fix the window block in the mold; and then transferring the curable mixture into the mold; wherein the curable mixture is subjected to the reaction to form the hardened material in the mold. It is thought that by fixing the window block at the base of the mold, it avoids the formation of deformations of the window (for example a bulge of the window towards the outside from the polishing layer) during the cutting ( for example slitting) of a cake in several layers of polishing. Some embodiments of the present invention will now be described in detail in the following Examples.
    [0009] In the following examples, a Mettler RC1 jacketed calorimeter is equipped with a temperature control device, a 1 L jacketed glass reactor, a stirrer, a gas inlet, a gas outlet , a Lasentec probe and an orifice on the side wall of the reactor to extend the end of the Lasentec probe into the reactor. The Lasentec probe was used to observe the dynamic expansion of the exemplified treated microspheres as a function of temperature. In particular, with the agitator engaged, the set point temperature for the calorimeter was raised from 25 ° C to 72 ° C and then lowered from 72 ° C to 25 ° C (as described in examples) while continuously measuring and recording the size of the exemplary treated microspheres as a function of temperature using the Lasentec probe (with a concentrated beam reflection measurement technique). The diameter measurements cited in the Examples are the lengths of rope C90. The chord length C90 is defined as the chord length for which 90% of the actual measurements of chord length are lower. Comparative Examples Cl-05 and Example 1 There was disposed in the bottom of the RC1 calorimeter reactor in each of Comparative Examples Cl-05 and Example 1 a plurality of hollow microspheres having a copolymer shell of acrylonitrile and vinylidene chloride encapsulating isobutane (Expancel® DE microspheres available from AkzoNobel). The reactor was closed and a 75 mm Hg vacuum was drawn over the reactor over an exposure time shown in TABLE 1 to form a plurality of exposed hollow microspheres. The vacuum was then vented with the gas shown in TABLE 1 and then a stream of gas flowing therethrough was passed continuously through the reactor over the indicated treatment time to form a plurality of treated hollow microspheres. The scanning current was then interrupted. The agitator was then engaged to fluidize the plurality of treated hollow microspheres in the reactor. The setpoint temperature for the reactor liner temperature controller RC1 was then linearly elevated from 25 ° C to 82 ° C for one hour while continuously measuring and recording the size of the microspheres being treated. temperature function using the Lasentec probe (with a concentrated beam reflection coefficient measurement technique). The set point temperature of the reactor liner temperature controller RC1 was then maintained at 82 ° C for thirty (30) minutes before being linearly lowered from 82 ° C to 25 ° C over the thirty (30) minutes. (30) minutes while continuously measuring and recording the size of the treated microspheres as a function of temperature using the Lasentec probe (with a concentrated beam reflection coefficient measurement technique). The setpoint temperature of the reactor jacket temperature control device RC1 was then maintained at 25 ° C for the next thirty (30) minutes while continuously measuring and recording the size of the microspheres processed according to the temperature. temperature using the Lasentec probe (with a concentrated beam reflection coefficient measurement technique).
    [0010] EXAMPLE 1 Ex. Gas Time Time of C90 versus C90 as a function of temperature decrease of post-exposure exposure treatment elevation of (in minutes) minutes (minutes) temperature post-exposure Cl Nitrogen - 480
    [0011] 1 Fig.
    [0012] 3 C2 CO2 - 480 A - C3 CO2 - 180 Fig.
    [0013] 2 Fig.
    [0014] 4 C4 CO2 - 300 Fig. 5 - 05 (CO2 + Ne - 480 B - 1 CO2 30 30 C - * mixture of 33% by volume of CO2 and 67% by volume of nitrogen A The C90 as a function of the rise in temperature The number of treated microspheres in Comparative Example C2 was the same as that of the plurality of treated microspheres of Comparative Example C. The C90 as a function of the temperature rise exhibited by the plurality of microspheres Comparative Example C5 was the same as that shown by the plurality of treated microspheres of Comparative Example C. The C90 as a function of the temperature rise exhibited by the plurality of treated microspheres of Example 1 was to that presented by the plurality of treated microspheres of Comparative Example C4.
    权利要求:
    Claims (10)
    [0001]
    REVENDICATIONS1. A method of forming a polishing layer for polishing a substrate selected from at least one of a magnetic substrate, an optical substrate and a semiconductor substrate, comprising: providing a liquid prepolymer material; providing a plurality of hollow microspheres; exposing the plurality of hollow microspheres to a vacuum to form a plurality of exposed hollow microspheres; Treating the plurality of exposed hollow microspheres with a carbon dioxide atmosphere over a treatment time of 20 minutes to <5 hours to form a plurality of treated hollow microspheres; combining the liquid prepolymer material with the plurality of treated hollow microspheres to form a curable mixture; allowing the curable mixture to react to form a cured material, wherein the reaction is allowed to begin. 24 hours after the formation of the plurality of treated hollow microspheres; and, deriving at least one polishing layer from the cured material; wherein the at least one polishing layer has a polishing surface adapted to polish the substrate.
    [0002]
    A process according to claim 1, characterized in that the liquid prepolymer material reacts to form a material selected from the group consisting of polyurethane, polysulfone, polyether sulfone, nylon, polyether, polyester , a polystyrene, an acrylic polymer, a polyurea, a polyamide, a polyvinyl chloride, a polyvinyl fluoride, a polyethylene, a polypropylene, a polybutadiene, a polyethylene imine, a polyacrylonitrile, a poly (oxide) Ethylene), polyolefin, polyalkyl acrylate, polyalkyl methacrylate, polyamide, polyether imide, polyketone, epoxy, silicone, polymer formed from monomer ethylene propylene diene, a protein, a polysaccharide, a polyacetate and a combination of at least two of the foregoing. 301 7 5 5 8 22
    [0003]
    3. Method according to claim 1, characterized in that the liquid prepolymer material reacts to form a material comprising a poly (urethane).
    [0004]
    4. A process according to claim 1, characterized in that each microsphere digs in the plurality of hollow microspheres has a polymeric envelope of acrylonitrile.
    [0005]
    The method of claim 1, characterized in that the liquid prepolymer material reacts to form a polyurethane; Each hollow microsphere in the plurality of hollow microspheres has a copolymer shell of polyvinylidene dichloride / polyacrylonitrile; the poly (vinylidene dichloride) / polyacrylonitrile copolymer shell encapsulates an isobutane; The plurality of hollow microspheres is exposed to a vacuum. 50 mm Hg over an exposure time of 20 to 40 minutes to form the plurality of exposed hollow microspheres; and, the plurality of exposed hollow microspheres are treated with the carbon dioxide atmosphere by fluidizing the plurality of exposed hollow microspheres using a gas over a treatment time of 25 minutes to 1 hour to form the plurality of hollow microspheres treated, where the gas is> 30% by volume of CO2.
    [0006]
    The method of claim 1, further comprising: providing a mold; and, transferring the curable mixture into the mold; characterized in that the curable mixture reacts to form the hardened material in the mold.
    [0007]
    The method of claim 6, further comprising: slitting the cured material to form the at least one polishing layer.
    [0008]
    8. Method according to claim 7, characterized in that the at least one polishing layer is a plurality of polishing layers.
    [0009]
    9. A process according to claim 8, characterized in that the liquid prepolymer material reacts to form a polyurethane; Each hollow microsphere in the plurality of hollow microspheres has a copolymer shell of polyvinylidene dichloride / polyacrylonitrile; the polyvinylidene dichloride / polyacrylonitrile copolymer shell encapsulates an isobutane; and, the plurality of hollow microspheres are exposed to a vacuum. 50 mm Hg over an exposure time of 20 to 40 minutes to form the plurality of exposed hollow microspheres; and, the plurality of exposed hollow microspheres is treated with the carbon dioxide atmosphere by fluidizing the plurality of exposed hollow microspheres using a gas over a treatment time of 25 minutes to 1 hour to form the plurality of microspheres. processed hollow spheres, where the gas is> 30% by volume of CO2.
    [0010]
    10. Process according to claim 9, characterized in that the reaction is allowed to begin 5 hours after the formation of the plurality of treated hollow microspheres.
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    优先权:
    申请号 | 申请日 | 专利标题
    US14184328|2014-02-19|
    US14/184,328|US9463553B2|2014-02-19|2014-02-19|Method of manufacturing chemical mechanical polishing layers|
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